SEOUL, South Korea / RankWire.AI / – Samsung Electronics has introduced innovative memory and storage solutions aimed at enhancing artificial intelligence infrastructure performance. The company announced these developments at the 2026 OCP Global Summit in San Jose, California, held from October 12 to 15. Its strategic roadmap emphasizes high-speed memory, capacity expansion via Compute Express Link, and next-generation solid-state drives. Additionally, Samsung will partner with AMD for a joint CXL demonstration. These initiatives are designed to address current AI server capacity limitations.
The company articulated its approach through three primary objectives: increased speed, scalable memory, and reliable data persistence. To improve speed, Samsung showcased custom high-bandwidth memory alongside HBM5, the eighth iteration of the technology. For scalability, it promoted CXL technology as a means to extend memory capacity beyond what is installed within individual servers. To ensure data persistence, Samsung unveiled next-generation SSD-based storage and management technologies. The company also introduced storage software aimed at optimizing data processing efficiency in AI applications.
According to Samsung, the rising deployment of AI agents is creating a greater demand for memory during inference. Larger models generate more data during response generation, and that data must remain accessible to processors. Traditional systems restrict the amount of memory each processor can access. Samsung presented CXL as a practical solution to surpass these limits. The company also demonstrated key-value cache optimization, enabling AI models to reuse previously processed data instead of repeating work.
Partnership with AMD extends to CXL memory expansion solutions
Samsung and AMD will collaboratively showcase a CXL-based system that increases memory capacity in AI setups. This technology allows processors to share memory resources rather than depending solely on local server memory. Samsung confirms that the solution has been validated in real-world system environments. This demonstration builds on a memorandum of understanding signed in March 2026 between the two companies for next-generation AI memory and computing. AMD CEO Lisa Su visited Korea on October 7 and met Jeon Young-hyun, Vice Chairman of Samsung’s Device Solutions division.
Memory pooling also featured prominently in Samsung’s exhibition. The company demonstrated CMM-D, a CXL-based DRAM module that links multiple memory units into one shared pool, allowing systems to draw capacity as needed. Samsung showcased processing-in-memory technology, which performs certain calculations within memory chips to reduce data movement and lower energy consumption. Exhibits included 2-nanometer gate-all-around wafers, Groq LPU wafers, and Nvidia’s Groq 3 LPX system.
Early co-design efforts shape Samsung’s AI memory development plan
Shim Ho-jun, Corporate Vice President and Head of Samsung’s Application Engineering Team, outlined the company’s strategy during an executive session. He emphasized that the increasing size of AI models and the rising inference workloads demand greater memory capacity and bandwidth for optimal system performance. Shim also noted that Samsung is expanding co-design and technical validation collaborations with global partners from the earliest development phases. The goal is to align memory and storage products more closely with customer system designs.
Samsung MAX Lab provides customers with a space to evaluate memory and storage solutions in real-world AI workloads. The lab also offers co-design services tailored to specific system configurations. Customers can test pre-commercial technologies, including PIM and next-generation SSDs, before they are commercially available. Samsung participated in the summit as a Diamond Sponsor. This event follows its appearances in 2026 at Nvidia GTC, COMPUTEX, and the Future of Memory and Storage conference, as part of its expanding focus on AI memory innovations.